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Si3424BDV
Vishay Siliconix
N-Channel 30 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
? TrenchFET ? Power MOSFET
V DS (V)
R DS(on) ( ? )
I D (A)
Q g (Typ.)
? 100 % R g Tested
30
0.028 at V GS = 10 V
0.038 at V GS = 4.5 V
8
7
a
6.2
? Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
? Load Switch for Portable Devices
TSOP-6
Top View
D
(1, 2, 5, 6)
D
1
6
D
3 mm D
G
2
3
5
4
D
S
Marking Code
AG XX
Lot Tracea b ility
and Date Code
G
(3)
Part # Code
S
(4)
2. 8 5 mm
Orderin g Information: Si3424BD V -T1-GE3 (Lead (P b )-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS (T A = 25 °C, unless otherwise noted)
N -Channel MOSFET
Parameter
Drain-Source Voltage
Gate-Source Voltage
T C = 25 °C
Symbol
V DS
V GS
Limit
30
± 20
8 a, b
Unit
V
Continuous Drain Current (T J = 150 °C) a
T C = 70 °C
T A = 25 °C
I D
6.7
7 c, d
A
T A = 70 °C
5.6 c, d
Pulsed Drain Current
I DM
30
Continuous Source-Drain Diode Current
T C = 25 °C
T A = 25 °C
I S
2.48
1.74 c, d
A
T C = 25 °C
2.98
Maximum Power Dissipation a
T C = 70 °C
T A = 25 °C
P D
1.9
2.1 c, d
W
T A = 70 °C
1.3 c, d
Operating Junction and Storage Temperature Range
T J , T stg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient c
Maximum Junction-to-Foot (Drain)
t ?? 5 s
Steady State
Steady State
R thJA
R thJA
R thJF
50
90
35
60
110
42
°C/W
Notes:
a. Package limited.
b. Based on T C = 25 °C.
c. Surface mounted on 1" x 1" FR4 board.
d. t = 5 s.
Document Number: 74623
S13-0631-Rev. E, 25-Mar-13
For technical questions, contact: pmostechsupport@vishay.com
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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